The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films
Identifieur interne : 002334 ( Main/Repository ); précédent : 002333; suivant : 002335The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films
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Abstract
In this paper, we report investigation of room temperature (RT) ferromagnetism in In2O3 (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10-5 emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm3 at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. It is concluded that the oxygen vacancies were important and compete with C substitution for the RT ferromagnetism.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of annealing on the room temperature ferromagnetism in co-sputtered In<sub>2</sub>O<sub>3</sub>: C thin films</title><author><name sortKey="Khan, R A" uniqKey="Khan R">R. A. Khan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Micro and Nano Devices, Department of Physics, Park Road Campus, COMSATS Institute of Information Technology</s1><s2>Islamabad 44000</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad 44000</wicri:noRegion></affiliation></author><author><name sortKey="Bhatti, A S" uniqKey="Bhatti A">A. S. Bhatti</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Micro and Nano Devices, Department of Physics, Park Road Campus, COMSATS Institute of Information Technology</s1><s2>Islamabad 44000</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad 44000</wicri:noRegion></affiliation></author><author><name sortKey="Kaibin, Ruan" uniqKey="Kaibin R">Ruan Kaibin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>3 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 637371</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0389432</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0389432 INIST</idno><idno type="RBID">Pascal:11-0389432</idno><idno type="wicri:Area/Main/Corpus">002A64</idno><idno type="wicri:Area/Main/Repository">002334</idno></publicationStmt><seriesStmt><idno type="ISSN">0304-8853</idno><title level="j" type="abbreviated">J. magn. magn. mater.</title><title level="j" type="main">Journal of magnetism and magnetic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Carbon additions</term><term>Doping</term><term>Ferromagnetism</term><term>Impurity density</term><term>Indium oxide</term><term>Magnetic hysteresis</term><term>Magnetization</term><term>Semimagnetic semiconductors</term><term>Sputter deposition</term><term>Thickness</term><term>Thin films</term><term>Vacancies</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term><term>Ferromagnétisme</term><term>Dopage</term><term>Dépôt pulvérisation</term><term>Epaisseur</term><term>Aimantation</term><term>Lacune</term><term>Addition carbone</term><term>Concentration impureté</term><term>Hystérésis magnétique</term><term>Oxyde d'indium</term><term>Couche mince</term><term>Semiconducteur semimagnétique</term><term>In2O3</term><term>Substrat silicium</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, we report investigation of room temperature (RT) ferromagnetism in In<sub>2</sub>O<sub>3</sub> (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10<sup>-5</sup> emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm<sup>3</sup> at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. It is concluded that the oxygen vacancies were important and compete with C substitution for the RT ferromagnetism.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0304-8853</s0></fA01><fA02 i1="01"><s0>JMMMDC</s0></fA02><fA03 i2="1"><s0>J. magn. magn. mater.</s0></fA03><fA05><s2>323</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The effect of annealing on the room temperature ferromagnetism in co-sputtered In<sub>2</sub>O<sub>3</sub>: C thin films</s1></fA08><fA11 i1="01" i2="1"><s1>KHAN (R. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BHATTI (A. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>KAIBIN (Ruan)</s1></fA11><fA14 i1="01"><s1>Centre for Micro and Nano Devices, Department of Physics, Park Road Campus, COMSATS Institute of Information Technology</s1><s2>Islamabad 44000</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University</s1><s2>Singapore 637371</s2><s3>SGP</s3><sZ>3 aut.</sZ></fA14><fA20><s1>2841-2845</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>17230</s2><s5>354000500127730230</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0389432</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of magnetism and magnetic materials</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, we report investigation of room temperature (RT) ferromagnetism in In<sub>2</sub>O<sub>3</sub> (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10<sup>-5</sup> emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm<sup>3</sup> at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. 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